Integrated Gate Commutated Thyristor Brief Introduction/Functions IGCT - integrated gate commutated thyristor is a kind of medium and high voltage switching device applicable to power conversion devices above 5MVA designed with new technologies such as buffer layer, transparent anode, and gate hard drive. Product Parameters/Key Technologies Repetitive peak off-state voltage: (V): 2500-6500 Average on-state current (A): 1700-3840 Operating junction temperature (℃): 90-125 Application Cases Motor drive, energy-saving and environmental protection, wind power generation, ship propulsion, power quality control and other power devices
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