SBD Chip And Device Brief Introduction/Functions It has the characteristics of positive temperature coefficient, high voltage resistance, high surge capacity, high current density, low specific on-resistance and so on. Product Parameters/Key Technologies Repetitive peak reverse voltage: (V): 1200-3300 Forward current (A): 10-47 Operating junction temperature (℃): -40-150 Application Cases Photovoltaic, rail transit, power grid, etc.
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MOSFET Chip And Device Brief Introduction/Functions Automotive grade SiC MOSFET chip has the characteristics of high current density, low specific on-resistance, high operating frequency, etc., suitable for new energy automobile and charging pile; high-voltage SiC MOSFET chip with built-in grid resistance has the characteristics of low switching loss and high operating frequency, suitable for rail transit and power grid. Product Parameters/Key Technologies Breakdown voltage (V): 1200-3300 Forward current (A): 32-60 Operating junction temperature (℃): -40-175 Application Cases High-voltage MOSFET is used for rail transit and power grid; Automotive grade MOSFET is used for new energy automobile and charging pile | |
SiC Module Brief Introduction/Functions Adopting second generation of SiC chip from CRRC, it has the characteristics of positive temperature coefficient and high surge capacity etc. Product Parameters/Key Technologies Rated voltage (V): 1200-3300 Rated current (A): 500-1600 Operating junction temperature (℃): 75-95 Application Cases Rail transit, power grid, new energy automobile, charging pile |